Resistive Random Access Memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance in a dielectric solid-state material, often referred to as a memristor. RRAM or ReRAM specifically works by using the method of creating physical defects in a layer of oxide material. Resistive random-access memory has an exponential potential for high storage density and lower power usage. It comes at an affordable cost compared to flash memory because of the thinness of memristors. It has become a part of digital mainstream due to its tremendous potential. RRAM is a non-volatile memory with excellent features as low power consumption and fast write. The Resistive Random Access Memory (RRAM) is used in many applications, including desktop machines and laptops, personal digital assistants, medical equipment, industrial, and even embedded systems. The technology is often used as an add-on to other forms of RAM for faster speed or lower cost. Although it can be used as a stand-alone memory device, many systems also include dedicated random access memory because it operates at a lower speed than the main memory. It is a very useful invention which enables the easy accessibility of data. In fact, it is being used in daily lives, in computer and other electronic appliances. In addition, this type of memory is also used in many common devices such as digital cameras, mp3 players and personal digital assistants. Due to the many benefits that this type of memory provides, its demand is increasing every day. One of its popular advantages is its ability to record and playback data easily, allowing the access of information to be done in a flash. The resistive random access memory is a form of non-volatile memory, works by altering physical resistance across a non-resin, electrically-insulated solid-state device, often called Memristor. Resistive Random Access Memory based system uses electric signals to change the position of the memristor, which causes the information it's holding to be altered in a non-volatile state. Depending on the polarity of applied voltage, it can be classified into two types of switching modes; such as unipolar switching and bipolar switching. The concept of multilevel data storage with a resistive random-access memory is a promising prospect for neuromorphic computing. Its low energy consumption, high operation speed, and scalability are all appealing characteristics. The basic principle of the resistive random-access memory involves metal-insulator-metal structure. Metal oxide is usually the insulator, and the metallic filament is responsible for charge transport. In contrast, in the newer Resistive Random Access Memory device, there is no metal in the memory. Instead, a combination of N+-Si/SiOx/P+-Si forms the N+IP+ diode. In addition, the N+IP+ diode has a large high-resistance/low-resiture window, making it an ideal retention memory. Resistive random-access memory is designed to be non-volatile. It is under development by a number of companies, and some have already patented their own versions of the technology. Resistive Random Access Memory operates by changing resistance of special dielectric material called a memory resistor (a memristor) whose resistance varies depending on the applied voltage. Among various next-generation NVMs (non-volatile memory), RRAM is a promising candidate for future memory due to its high-efficiency, high-speed and energy-saving characteristics.
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